INFLUENCE OF SUBSTRATE BIAS UPON AC CHARACTERISTICS OF MOS TRANSISTORS

被引：4

作者：

BERGVELD, P

机构：

[1] Twente Inst. Tech., Enschede

来源：

PROCEEDINGS OF THE IEEE | 1969年 / 57卷 / 01期

关键词：

D O I：

10.1109/PROC.1969.6871

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In applications where MOS transistors are used in the “variable-resistor” region, it is often useful to bias the bulk with respect to the source in order to control the dc value of the channel resistance. What this biasing of the substrate means for the small signal coefficients—the mutual conductance and the amplification factor—is calculated and agreement between calculated and measured values is shown. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：72 / &