POSITIVE RESIST IMAGE BY DRY ETCHING - NEW DRY DEVELOPED POSITIVE WORKING SYSTEM FOR ELECTRON-BEAM AND DEEP ULTRAVIOLET LITHOGRAPHY

被引:40
作者
PIERRAT, C
TEDESCO, S
VINET, F
LERME, M
DALZOTTO, B
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 06期
关键词
D O I
10.1116/1.584457
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1782 / 1786
页数:5
相关论文
共 19 条
  • [1] COANE P, 1986, MICROCIRCUIT ENG, P133
  • [2] Freyer J. L., 1986, Proceedings of the SPIE - The International Society for Optical Engineering, V632, P5, DOI 10.1117/12.963663
  • [3] FUJITA M, 1988, IEEE J SOLID STATE C, V23
  • [4] GROBMAN WD, 1978, IEDM WASHINGTON, P58
  • [5] HIROSE M, 1988, P KTI MICROELECTRONI, P79
  • [6] IIDA Y, 1984, JPN ANNU REV ELECTR, V13, P287
  • [7] KLYMKO PW, 1988, P KTI MICROELECTRONI, P209
  • [8] AN E-BEAM MICROFABRICATION SYSTEM FOR NANOLITHOGRAPHY
    LEE, KL
    AHMED, H
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 946 - 949
  • [9] MACDONALD S, 1987, P AM CHEM S WASHINGT, P350
  • [10] Orvek K. J., 1987, Proceedings of the SPIE - The International Society for Optical Engineering, V771, P281, DOI 10.1117/12.940335