DEFECT-CONCENTRATION DEPENDENCE OF THE SPIN-DENSITY-WAVE TRANSPORT IN THE ORGANIC CONDUCTOR (TETRAMETHYLTETRASELENAFULVALENE)2PF6

被引：27

作者：

KANG, W ^{[1
]}

TOMIC, S ^{[1
]}

JEROME, D ^{[1
]}

机构：

[1] UNIV ZAGREB,INST PHYS,YU-41001 ZAGREB,YUGOSLAVIA

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 01期

关键词：

D O I：

10.1103/PhysRevB.43.1264

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the effects of chemical impurities and x-ray irradiation-induced defects on the electric-field-dependent conductivity in the spin-density-wave (SDW) state of the organic conductor (TMTSF)2PF6. For a large number of nominally pure samples the temperature dependence of the threshold field agrees with theoretical predictions that assume weak coupling between the SDW and chemical impurities. For irradiated samples the threshold field increases linearly with the defect concentration and its temperature dependence corresponds to that expected in the strong-coupling limit.

引用

页码：1264 / 1267

页数：4

共 15 条

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