INDIRECT EXCHANGE INTERACTION IN DILUTED MAGNETIC SEMICONDUCTORS

被引:9
作者
YU, SS [1 ]
LEE, VC [1 ]
机构
[1] NATL TAIWAN UNIV, DEPT PHYS, TAIPEI 10764, TAIWAN
关键词
D O I
10.1088/0953-8984/4/11/021
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The indirect exchange interaction between localized magnetic moments embedded in II-VI semiconductor hosts is theoretically studied. Based on realistic LCAO bands, the indirect exchange is calculated by the perturbation theory. In evaluating the second-order energy shift, a modified linear analytic tetrahedron method is used to perform the double Brillouin zone integration. From our results, two qualitative conclusions are reached. First, the indirect exchange is usually antiferromagnetic for the nearest few neighbours, becoming ferromagnetic as the distance between magnetic ions is increased. Second, the intrinsic cubic symmetry of the semiconductor host could induce strong directional dependence of the indirect exchange, and the sphericalization of the matrix element in the Brillouin zone might affect substantially the numerical accuracy of the calculated exchange coupling constant even when the band energy is essentially isotropic.
引用
收藏
页码:2961 / 2975
页数:15
相关论文
共 57 条
[1]   SPIN-GLASS WITH A SEMICONDUCTOR AS HOST [J].
ABRIKOSOV, AA .
JOURNAL OF LOW TEMPERATURE PHYSICS, 1980, 39 (1-2) :217-229
[2]   OPTICAL DETERMINATION OF THE ANTIFERROMAGNETIC EXCHANGE CONSTANT BETWEEN NEAREST-NEIGHBOR MN2+ IONS IN CD0.95MN0.05TE [J].
AGGARWAL, RL ;
JASPERSON, SN ;
BECLA, P ;
GALAZKA, RR .
PHYSICAL REVIEW B, 1985, 32 (08) :5132-5137
[3]  
ANDRIANOV DG, 1980, SOV PHYS SEMICOND+, V14, P711
[4]  
ANDRIANOV DG, 1978, SOV PHYS SEMICOND+, V12, P1323
[5]  
ANDRIANOV DG, 1976, SOV PHYS SEMICOND+, V10, P66
[6]  
ANDRIANOV DG, 1980, FIZ TEKH POLUPROV, V14, P1202
[7]   MAGNETIZATION AND MAGNETOREFLECTANCE IN ZN1-XMNXTE [J].
BARILERO, G ;
RIGAUX, C ;
MENANT, M ;
HAU, NH ;
GIRIAT, W .
PHYSICAL REVIEW B, 1985, 32 (08) :5144-5148
[8]   EFFECT OF EXCHANGE ON INTERBAND MAGNETOABSORPTION IN ZERO GAP HG1-5MNKTE MIXED-CRYSTALS [J].
BASTARD, G ;
RIGAUX, C ;
GULDNER, Y ;
MYCIELSKI, J ;
MYCIELSKI, A .
JOURNAL DE PHYSIQUE, 1978, 39 (01) :87-98
[9]  
BASTARD G, 1979, PHYS REV B, V20, P4256, DOI 10.1103/PhysRevB.20.4256
[10]   ELECTRONIC AND TRANSPORT-PROPERTIES OF HGCDTE AND HGZNTE [J].
BERDING, MA ;
KRISHNAMURTHY, S ;
SHER, A ;
CHEN, AB .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (05) :3014-3018