LOW THRESHOLD-CURRENT, WIDE TUNING-RANGE, BUTT-JOINT DBR LASER GROWN WITH 4 MOVPE STEPS

被引：12

作者：

STOLTZ, B ^{[1
]}

DASLER, M ^{[1
]}

SAHLEN, O ^{[1
]}

机构：

[1] ERICSSON TELECOM AB,FIBRE OPT RES CTR,S-12625 STOCKHOLM,SWEDEN

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 08期

关键词：

LASERS; EPITAXY AND EPITAXIAL GROWTH; LITHOGRAPHY;

D O I：

10.1049/el:19930469

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InGaAsP/InP butt-joint, buried-heterostructure DBR lasers, with 8 mA threshold current at T = 293 K have been developed, using electron-beam lithography and a four-step MOVPE process with a semi-insulating Fe:InP current-blocking structure. Packaged devices give 5 mW fibre-coupled power. The maximum tuning range is 9.1 nm. The 3 dB modulation bandwidth is 9 GHz.

引用

页码：700 / 702

页数：3

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