SURFACE DECOMPOSITION OF GAAS SUBSTRATES IN LPE GROWTH OF INGAASP AND ITS EFFECT ON CRYSTAL QUALITY

被引：13

作者：

MUKAI, S

YAJIMA, H

SHIMADA, J

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 05期

关键词：

D O I：

10.1143/JJAP.20.1001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1001 / 1002

页数：2

相关论文

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