CIRCUIT SIMULATION OF RESONANT TUNNELING DOUBLE-BARRIER DIODE

被引：10

作者：

LIU, HC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 09期

关键词：

D O I：

10.1063/1.341204

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4792 / 4794

页数：3

共 13 条

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[6] SIMULATION OF EXTRINSIC BISTABILITY OF RESONANT TUNNELING STRUCTURES [J].

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[7]

LIU HC, 1987, APPL PHYS LETT, V50, P124

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[10] OBSERVATION OF MILLIMETER-WAVE OSCILLATIONS FROM RESONANT TUNNELING DIODES AND SOME THEORETICAL CONSIDERATIONS OF ULTIMATE FREQUENCY LIMITS [J].

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