RADIATIVE SPECTRA FROM HOT PHOTO-CARRIERS

被引：5

作者：

LEITE, RCC

机构：

来源：

SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 01期

关键词：

D O I：

10.1016/0038-1101(78)90134-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：177 / 178

页数：2

共 8 条

[1]

Mattos J. C. V., 1973, Optics Communications, V8, P73, DOI 10.1016/0030-4018(73)90185-5

[2] NON EQUILIBRIUM PHONON DISTRIBUTION AND ELECTRON-PHONON COUPLING IN SEMICONDUCTORS [J].

MATTOS, JCV ;

LEITE, RCC .

SOLID STATE COMMUNICATIONS, 1973, 12 (06) :465-468

[3] DEPENDENCE OF HOT CARRIERS TEMPERATURE ON LATTICE TEMPERATURE IN CDS [J].

MENESES, EA ;

JANNUZZI, N ;

LEITE, RCC .

SOLID STATE COMMUNICATIONS, 1973, 13 (03) :245-248

[4] RADIATIVE RECOMBINATION FROM PHOTOEXCITED HOT CARRIERS IN GAAS [J].

SHAH, J ;

LEITE, RCC .

PHYSICAL REVIEW LETTERS, 1969, 22 (24) :1304-&

[5] PHOTOEXCITED HOT LO PHONONS IN GAAS [J].

SHAH, J ;

LEITE, RCC ;

SCOTT, JF .

SOLID STATE COMMUNICATIONS, 1970, 8 (14) :1089-&

[6] DISTRIBUTION FUNCTION OF PHOTOEXCITED CARRIERS IN HIGHLY EXCITED GAAS [J].

SHAH, J .

PHYSICAL REVIEW B, 1974, 10 (08) :3697-3699

[7] PHOTOEXCITED HOT-ELECTRONS AND EXCITONS IN CDSE AT 2 DEGREES K [J].

SHAH, J .

PHYSICAL REVIEW B, 1974, 9 (02) :562-567

[8] SINGLE-PARTICLE SCATTERING FROM HOT-ELECTRONS IN GAAS [J].

TURTELLI, RS ;

DECASTRO, ARB ;

LEITE, RCC .

SOLID STATE COMMUNICATIONS, 1975, 16 (08) :969-971

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