PSEUDOPOTENTIAL CALCULATION OF STACKING-FAULT ENERGY IN SILICON

被引：12

作者：

CHEN, LJ

FALICOV, LM

机构：

[1] UNIV CALIF,DEPT PHYS,BERKELEY,CA 94720

[2] LAWRENCE BERKELEY LAB,INORG MAT RES DIV,BERKELEY,CA 94720

来源：

PHILOSOPHICAL MAGAZINE | 1974年 / 29卷 / 01期

关键词：

D O I：

10.1080/14786437408213549

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1 / 8

页数：8

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[9]

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[10] ELECTRONIC BAND STRUCTURE OF ARSENIC .I. PSEUDOPOTENTIAL APPROACH [J].

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GOLIN, S .

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