INFLUENCE OF PREANNEALING ON PERFECTION OF CZOCHRALSKI-GROWN SILICON-CRYSTALS SUBJECTED TO HIGH-PRESSURE TREATMENT

被引：7

作者：

DATSENKO, LI

MISIUK, A

HARTWIG, J

BRIGINETS, A

KHRUPA, VI

机构：

[1] INST ELECTR MAT TECHNOL, PL-02668 WARSAW, POLAND

[2] ESRF, DIV EXPT, F-38043 GRENOBLE, FRANCE

来源：

ACTA PHYSICA POLONICA A | 1994年 / 86卷 / 04期

关键词：

D O I：

10.12693/APhysPolA.86.585

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The effect of high temperature (up to 1120-degrees-C)-high pressure (up to 1.1 GPa) treatment on the resulting defect structure of preannealed (450-725-degrees-C, up to 96 hours) Czochralski grown Si crystals was studied by X-ray diffraction. The values of the Debye-Waller static factor and of the root-mean-square atomic displacement due to defects were determined for various Laue reflections. Well-defined development of the cluster like defect structure after high temperature pressurization depending to a substantial extent on the preannealing conditions was observed.

引用

页码：585 / 590

页数：6