TRANSIENT-BEHAVIOR OF AN ACTIVELY MODE-LOCKED SEMICONDUCTOR-LASER DIODE

被引：9

作者：

AUYEUNG, JC

BERGMAN, LA

JOHNSTON, AR

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 02期

关键词：

D O I：

10.1063/1.93449

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：124 / 126

页数：3

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