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MODIFIED THEORY OF CURRENT/VOLTAGE RELATION IN SILICON P-N JUNCTIONS

被引：26
作者：
FAULKNER, EA
BUCKINGHAM, MJ
机构：
来源：
ELECTRONICS LETTERS | 1968年 / 4卷 / 17期
关键词：
D O I：
10.1049/el:19680282
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：359 / +
页数：1
相关论文
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[3]   CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].
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PHYSICAL REVIEW, 1952, 87 (05) :835-842
[5]   THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J].
SHOCKLEY, W .
BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03) :435-489
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