DOMAIN-STRUCTURES OF CDTE LAYERS GROWN BY MOCVD ON OFFSET-ANGLE SAPPHIRE SUBSTRATES

被引：16

作者：

MARUYAMA, K

YOSHIKAWA, M

TAKIGAWA, H

机构：

[1] Fujitsu Lab Ltd, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

Cadmium Telluride - Domain Structures - Metalorganic Chemical Vapor Deposition;

D O I：

10.1016/0022-0248(88)90616-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：761 / 765

页数：5

共 12 条

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[6] TWIN NUCLEATION IN LAYERS OF CDTE ON [III] CDTE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].

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[9] ORGANOMETALLIC GROWTH OF II-VI-COMPOUNDS [J].

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[10] GROWTH OF LOW DISLOCATION DENSITY CDTE-FILMS ON HYDROPLANED CDTE SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

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