GERMANIDE FORMATION BY THERMAL-TREATMENT OF PLATINUM FILMS DEPOSITED ON SINGLE-CRYSTAL GE[100] SUBSTRATES

被引：28

作者：

GRIMALDI, MG ^{[1
]}

WIELUNSKI, L ^{[1
]}

NICOLET, MA ^{[1
]}

TU, KN ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

THIN SOLID FILMS | 1981年 / 81卷 / 03期

关键词：

D O I：

10.1016/0040-6090(81)90483-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：207 / 211

页数：5

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[2] GROWTH KINETICS OF PD2GE AND PDGE ON SINGLE-CRYSTAL AND EVAPORATED GERMANIUM
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[3] Tu K. N., 1978, Thin films. Interdiffusion and reactions, P359
[4] 1ST PHASE NUCLEATION IN SILICON-TRANSITION-METAL PLANAR INTERFACES
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[5] 1ST PHASE TO NUCLEATE IN PLANAR TRANSITION METAL-GERMANIUM INTERFACES
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