SINGLE-MODE JUNCTION-UP TJS']JS LASERS WITH ESTIMATED LIFETIME OF 106 HOURS

被引：33

作者：

NITA, S

NAMIZAKI, H

TAKAMIYA, S

SUSAKI, W

机构：

[1] Semiconductor Laboratory, Mitsubishi Electric Corporation, Hyogo

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1979年 / 15卷 / 11期

关键词：

D O I：

10.1109/JQE.1979.1069917

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Accelerated life test for single-mode junction-up TJS lasers have been carried out at ambient temperatures of 50, 60, 70, 80, and 90°C. The laser chips are passivated with Si3N4 films and die bonded on Si submounts. Estimated mean time to failure is 106 h at 25°C. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：1208 / 1209

页数：2

共 8 条

[1] CONTINUOUSLY OPERATED (AL,GA)AS DOUBLE-HETEROSTRUCTURE LASERS WITH 70-DEGREES-C LIFETIMES AS LONG AS 2 YEARS [J].

HARTMAN, RL ;

SCHUMAKER, NE ;

DIXON, RW .

APPLIED PHYSICS LETTERS, 1977, 31 (11) :756-759

[2]

Ikeda K., 1978, Transactions of the Institute of Electronics and Communication Engineers of Japan, Section E (English), VE61, P136

[3]

ISHII M, 1978, 1978 INT SEM LAS C

[4] STABLE OPERATION OF BURIED-HETEROSTRUCTURE GA1-XALXAS LASERS DURING ACCELERATED AGING [J].

KAJIMURA, T ;

SAITO, K ;

SHIGE, N ;

ITO, R .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :626-628

[5]

KOBAYASHI T, 1977, TECH DIG IOOC77, P33

[6] ACCELERATED STEP-TEMPERATURE AGING OF ALXGA1-XAS HETEROJUNCTION LASER-DIODES [J].

KRESSEL, H ;

ETTENBERG, M ;

LADANY, I .

APPLIED PHYSICS LETTERS, 1978, 32 (05) :305-308

[7] HIGH-TEMPERATURE SINGLE-MODE CW OPERATION WITH A JUNCTION-UP TJS']JS-LASER [J].

KUMABE, H ;

TANAKA, T ;

NAMIZAKI, H ;

ISHII, M ;

SUSAKI, W .

APPLIED PHYSICS LETTERS, 1978, 33 (01) :38-39

[8] TEMPERATURE-DEPENDENCE OF DEGRADATION MECHANISMS IN LONG-LIVED (GAAL)AS DH LASERS [J].

RITCHIE, S ;

GODFREY, RF ;

WAKEFIELD, B ;

NEWMAN, DH .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) :3127-3132

← 1 →