ENHANCEMENT OF TRANSPORT CRITICAL CURRENT-DENSITY OF BA2YCU3O7-DELTA THIN-FILM BY 28 MEV ELECTRON-IRRADIATION

被引：15

作者：

TERAI, T ^{[1
]}

MASEGI, T ^{[1
]}

TAKAHASHI, Y ^{[1
]}

ENOMOTO, Y ^{[1
]}

KUBO, S ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, APPL ELECTR LABS, TOKAI, IBARAKI 31911, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 11期

关键词：

Ba[!sub]2[!/sub]YCu[!sub]3[!/sub]O[!sub]7[!/sub]-[!sub]δ[!/sub; Critical current density; Electron irradiation; Pinning center; Superconductor; Thin film;

D O I：

10.1143/JJAP.29.L2053

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Effect of 28 MeV electron irradiation was investigated on the critical current density (Jc) of high-Tcsuperconductor Ba2YCu3O7-δ(5 thin films. For the film irradiated with a fluence of 4.7 × 1016electrons/cm2, Jcdetermined from I- V characteristics at temperatures from 75 to 85 K was enhanced by about 8%. The enhance ratio of Jcdue to irradiation increased with fluence over the range investigated, while the critical temperature (Tc) was unchanged. The temperature dependence of Jcwas not affected by electron irradiation. © 1990 IOP Publishing Ltd.

引用

页码：L2053 / L2055

页数：3

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