CHARACTERIZATION OF A-B/CH FILMS DEPOSITED FROM DIFFERENT BORON CONTAINING PRECURSORS

This paper describes the characteristics of a-B/C:H films deposited by PCVD processes with a new harmless precursor-carborane (C2B10H12) in the model device as well as in the T-11M tokamak. Deposition conditions, density. thickness, structure, chemical bonds, content and depth distribution of elements, and some other properties of the films. were investigated in detail. The structure and properties of the films were compared with those for films deposited by other boronization techniques with different precursors (diborane and trimethylborane) and also with a-C:H films. Application of carborane for boronization leads us to the increase of B/C ratio in the films up to a value of 3-4 which is optimal for the erosion process. The structure of the nearest order became icosahedral instead of a mixture of diamond-like and icosahedral as in the case of deposition with diborane. All amorphous a-B/C: H films are homogeneous, and uniform in depth. The hydrogen content is the same as for other B containing films.