EXTREMELY HIGH-FREQUENCY (24 GHZ) INGAASP DIODE-LASERS WITH EXCELLENT MODULATION EFFICIENCY

被引：40

作者：

MELAND, E

HOLMSTROM, R

SCHLAFER, J

LAUER, RB

POWAZINIK, W

机构：

[1] GTE Laboratories Incorporated, Waltham, MA 02254

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 21期

关键词：

Optical modulation; Semiconductor lasers;

D O I：

10.1049/el:19901169

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

µ-3/an InGaAsP lasers with 3dB bandwidths of 24 GHz and intrinsic resonance frequencies in excess of 22 GHz have been successfully fabricated. This is the highest bandwidth ever reported for a semiconductor laser, and the highest resonant frequency for InGaAsP lasers. Excellent modulation efficiencies are observed to high frequencies. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1827 / 1829

页数：3

共 5 条

[1] HIGH-SPEED INGAASP CONSTRICTED-MESA LASERS
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[2] WIDE-BANDWIDTH RECEIVER PHOTODETECTOR FREQUENCY-RESPONSE MEASUREMENTS USING AMPLIFIED SPONTANEOUS EMISSION FROM A SEMICONDUCTOR OPTICAL AMPLIFIER
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[3] OLSHANKSY R, 1989, ELECTRON LETT, V23, P839
[4] FREQUENCY-RESPONSE OF 1.3-MU-M INGAASP HIGH-SPEED SEMICONDUCTOR-LASERS
OLSHANSKY, R
HILL, P
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (09) : 1410 - 1418
[5] ULTRAHIGH-SPEED 1.55-MU-M LAMBDA-4-SHIFTED DFB PIQ-BH LASERS WITH BANDWIDTH OF 17-GHZ
UOMI, K
NAKANO, H
CHINONE, N
[J]. ELECTRONICS LETTERS, 1989, 25 (10) : 668 - 669

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