ULTRASHALLOW EMITTER-BASE PROFILES BY DOUBLE DIFFUSION

被引：1

作者：

BIEBL, M

BIANCO, M

EHINGER, K

VONPHILIPSBORN, H

KLOSE, H

机构：

[1] Siemens AG, Corporate Research, 8000 Munich 83

[2] Universität Regensburg, NWF II, Physik, Universitätsstr. 31

[3] Fachhochschule Karlsruhe, 7500 Karlsruhe 1

来源：

MICROELECTRONIC ENGINEERING | 1992年 / 19卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(92)90451-V

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The diffusion of boron out of polysilicon was investigated. Diffusion and segregation coefficients were determined for furnace annealing and rapid thermal processing. Double polysilicon self-aligned npn bipolar transistors with sub 100 nm base widths were obtained, using the double diffusion technique. Calculations for the optimization of the base pinch resistance are presented. It is shown that base widths as low as 50 nm can be obtained with the double diffusion technique.

引用

页码：347 / 350

页数：4