LEC GROWTH AND CHARACTERIZATION OF UNDOPED INP CRYSTALS

被引：11

作者：

UEMURA, C

SHINOYAMA, S

YAMAMOTO, A

TOHNO, S

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 52卷 / APR期

关键词：

D O I：

10.1016/0022-0248(81)90346-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：591 / 596

页数：6

共 11 条

[1] LIQUID ENCAPSULATED CZOCHRALSKI PULLING OF INP CRYSTALS [J].

BACHMANN, KJ ;

BUEHLER, E ;

SHAY, JL ;

STRNAD, AR .

JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (02) :389-406

[2] INP SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS [J].

BARRERA, JS ;

ARCHER, RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) :1023-1030

[3] INCORPORATION OF SI IN LIQUID-PHASE EPITAXIAL INP LAYERS [J].

BAUMANN, GG ;

BENZ, KW ;

PILKUHN, MH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (08) :1232-1235

[4]

GRABMAIER BC, 1972, J CRYST GROWTH, V13, P635

[5]

Mullin J. B., 1968, Journal of Crystal Growth, V3-4Spe, P281, DOI 10.1016/0022-0248(68)90154-1

[6]

Mullin J. B., 1972, Journal of Crystal Growth, V13-14, P640, DOI 10.1016/0022-0248(72)90534-9

[7] GROWTH OF DISLOCATION-FREE GAP CRYSTALS FROM A STOICHIOMETRIC MELT [J].

ROKSNOER, PJ ;

HUIJBREGTS, JMPL ;

VANDEWIJGERT, WM ;

DEKOCK, AJR .

JOURNAL OF CRYSTAL GROWTH, 1977, 40 (01) :6-12

[8] IMPURITY EFFECT ON GROWTH OF DISLOCATION-FREE INP SINGLE-CRYSTALS [J].

SEKI, Y ;

MATSUI, J ;

WATANABE, H .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :3374-3376

[9] GROWTH OF DISLOCATION-FREE UNDOPED INP CRYSTALS [J].

SHINOYAMA, S ;

UEMURA, C ;

YAMAMOTO, A ;

TOHNO, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) :L331-L334

[10]

STEINEMANN A, 1967, CRYST GROWTH, P81

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