LOCAL SPECTRAL RESPONSES OF TRANSITION-METAL DICHALCOGENIDES IN PHOTO-ELECTROCHEMICAL CELLS

被引:16
作者
DEANGELIS, L [1 ]
SCAFE, E [1 ]
GALLUZZI, F [1 ]
FORNARINI, L [1 ]
SCROSATI, B [1 ]
机构
[1] UNIV ROME,IST CHIM FIS,I-00100 ROME,ITALY
关键词
D O I
10.1149/1.2124093
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1237 / 1240
页数:4
相关论文
共 18 条
[1]  
BELL RO, 1980, APPL PHYS LETT, V36, P936, DOI 10.1063/1.91379
[2]  
DiStefano T. H., 1979, Nondestructive Evaluation of Semiconductor Materials and Devices, P457
[3]   SEMICONDUCTOR ELECTRODES .29. HIGH-EFFICIENCY PHOTOELECTROCHEMICAL SOLAR-CELLS WITH N-WSE2 ELECTRODES IN AN AQUEOUS IODIDE MEDIUM [J].
FAN, FRF ;
WHITE, HS ;
WHEELER, B ;
BARD, AJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) :518-520
[4]   ELECTROCHEMICAL SOLAR-CELLS WITH LAYER-TYPE SEMICONDUCTOR ANODES - PERFORMANCE OF N-MOS2 CELLS [J].
FORNARINI, L ;
STIRPE, F ;
SCROSATI, B ;
RAZZINI, G .
SOLAR ENERGY MATERIALS, 1981, 5 (01) :107-114
[5]  
FURTAK TE, 1980, J APPL PHYS, V51, P8018
[6]   ELECTROCHEMICAL SOLAR-CELL BASED ON THE D-BAND SEMICONDUCTOR TUNGSTEN-DISELENIDE [J].
GOBRECHT, J ;
GERISCHER, H ;
TRIBUTSCH, H .
BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1978, 82 (12) :1331-1335
[7]   PERFORMANCE OF SYNTHETICAL N-MOSE2 IN ELECTROCHEMICAL SOLAR-CELLS [J].
GOBRECHT, J ;
TRIBUTSCH, H ;
GERISCHER, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (12) :2085-2086
[8]   LOW-ENERGY ABSORPTION-EDGE IN 2H-MOS2 AND 2H-MOSE2 [J].
GOLDBERG, AM ;
BEAL, AR ;
LEVY, FA ;
DAVIS, EA .
PHILOSOPHICAL MAGAZINE, 1975, 32 (02) :367-378
[9]  
GUTOWICZKRUSIN D, 1981, APPL PHYS LETT, V38, P87
[10]   THE ROLE OF CARRIER DIFFUSION AND INDIRECT OPTICAL-TRANSITIONS IN THE PHOTOELECTROCHEMICAL BEHAVIOR OF LAYER TYPE D-BAND SEMICONDUCTORS [J].
KAUTEK, W ;
GERISCHER, H ;
TRIBUTSCH, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (11) :2471-2478