LATTICE-RELAXATION AROUND SUBSTITUTIONAL DEFECTS IN SEMICONDUCTORS

被引：55

作者：

BECHSTEDT, F ^{[1
]}

HARRISON, WA ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT APPL PHYS,STANFORD,CA 94305

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.39.5041

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5041 / 5050

页数：10

共 40 条

[1] [Anonymous], 1988, SEMICONDUCTOR SURFAC
[2] [Anonymous], ELECTRONIC STRUCTURE
[3] BACHELET GB, 1985, 17TH P INT C PHYS SE, P755
[4] LATTICE-DISTORTIONS AROUND ATOMIC SUBSTITUTIONS IN II-VI ALLOYS
BALZAROTTI, A
[J]. PHYSICA B & C, 1987, 146 (1-2): : 150 - 175
[5] LOCAL-STRUCTURE OF TERNARY SEMICONDUCTING RANDOM SOLID-SOLUTIONS - EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE OF CD1-XMNXTE
BALZAROTTI, A
CZYZYK, M
KISIEL, A
MOTTA, N
PODGORNY, M
ZIMNALSTARNAWSKA, M
[J]. PHYSICAL REVIEW B, 1984, 30 (04): : 2295 - 2298
[6] CALCULATION OF THE TOTAL ENERGY OF CHARGED POINT-DEFECTS USING THE GREENS-FUNCTION TECHNIQUE
BARAFF, GA
SCHLUTER, M
[J]. PHYSICAL REVIEW B, 1984, 30 (04): : 1853 - 1866
[7] ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS
BARAFF, GA
SCHLUTER, M
[J]. PHYSICAL REVIEW LETTERS, 1985, 55 (12) : 1327 - 1330
[8] SELF-CONSISTENT TIGHT-BINDING METHOD FOR TOTAL ENERGY CALCULATIONS OF TETRAHEDRAL SEMICONDUCTORS INCLUDING SURFACES AND DEFECTS
BECHSTEDT, F
REICHARDT, D
ENDERLEIN, R
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1985, 131 (02): : 643 - 657
[9] METASTABILITY OF THE ISOLATED ARSENIC-ANTISITE DEFECT IN GAAS
CHADI, DJ
CHANG, KJ
[J]. PHYSICAL REVIEW LETTERS, 1988, 60 (21) : 2187 - 2190
[10] SEMICONDUCTOR PSEUDOBINARY ALLOYS - BOND-LENGTH RELAXATION AND MIXING ENTHALPIES
CHEN, AB
SHER, A
[J]. PHYSICAL REVIEW B, 1985, 32 (06): : 3695 - 3711