THE ISOTROPIC ASSUMPTION DURING THE CZOCHRALSKI GROWTH OF SINGLE SEMICONDUCTORS CRYSTALS

被引：41

作者：

LAMBROPOULOS, JC

机构：

[1] Department of Mechanical Engineering, University of Rochester, Rochester,NY,14627, United States

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 84卷 / 03期

关键词：

The authors wishes to thank Dr. F.T. Geyling and Dr. A.S. Jordan of AT&T Bell Labs and Dr. G. Astfalk of AT&T Engineering Research Center for helpful comments and suggestions. The financial support of the Department of Mechanical Engineering at the University of Rochester is also;

D O I：

10.1016/0022-0248(87)90262-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：349 / 358

页数：10

相关论文

共 30 条

[1]

ANTONOV PI, 1976, IZV AN SSSR FIZ+, V40, P1414

[2] ANISOTROPY OF THERMOELASTIC STRESSES IN SHAPED SAPPHIRE SINGLE-CRYSTALS [J].

ANTONOV, PI ;

BAKHOLDIN, SI ;

GALAKTIONOV, EV ;

TROPP, EV ;

NIKANOROV, SP .

JOURNAL OF CRYSTAL GROWTH, 1981, 52 (APR) :404-410

[3]

ANTONOV PI, 1980, IZV AN SSSR FIZ+, V44, P255

[4] SOME DEFECTS IN CRYSTALS GROWN FROM THE MELT .1. DEFECTS CAUSED BY THERMAL STRESSES [J].

BILLIG, E .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1956, 235 (1200) :37-+

[5] DISLOCATION DENSITY AND SHEET RESISTANCE VARIATIONS ACROSS SEMI-INSULATING GAAS WAFERS [J].

BLUNT, RT ;

CLARK, S ;

STIRLAND, DJ .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (07) :943-949

[6]

Boley B. A., 1960, THEORY THERMAL STRES

[7] TEMPERATURE PROFILE AND THERMAL-STRESS CALCULATIONS IN GAAS CRYSTALS GROWING FROM THE MELT [J].

DUSEAUX, M .

JOURNAL OF CRYSTAL GROWTH, 1983, 61 (03) :576-590

[8]

GALAKTIONOV EV, 1976, IZV AN SSSR FIZ+, V40, P1399

[9]

HOLMES DE, 1983, APPL PHYS LETT, V42, P610

[10] RESIDUAL-STRESSES OF CZOCHRALSKI-GROWN CRYSTAL [J].

IWAKI, T ;

KOBAYASHI, N .

JOURNAL OF APPLIED MECHANICS-TRANSACTIONS OF THE ASME, 1981, 48 (04) :866-870