ELECTRICAL-PROPERTIES OF BISMUTH SELENIDE (BI2SE3) THIN-FILMS PREPARED BY REACTIVE EVAPORATION

被引：37

作者：

JOHN, KJ

PRADEEP, B

MATHAI, E

机构：

[1] Cochin Univ of Science and, Technology, Kerala, India

来源：

SOLID STATE COMMUNICATIONS | 1993年 / 85卷 / 10期

关键词：

D O I：

10.1016/0038-1098(93)90196-T

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The electrical transport properties (Hall coefficient, d.c. conductivity, Hall mobility and thermoelectric power) of bismuth selenide thin films prepared by reactive evaporation method have been studied in the temperature range from liquid nitrogen to 420 K. Hall effect measurements show that the films have a carrier concentration of almost-equal-to 1.02 x 10(19) cm-3 with n-type conductivity.

引用

页码：879 / 881

页数：3

共 18 条

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