OPTICAL-PROPERTIES OF GASB-ALSB HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

被引：7

作者：

LAMBERT, B

TOUDIC, Y

ROUILLARD, Y

BAUDET, M

GUENAIS, B

DEVEAUD, B

VALIENTE, I

SIMON, JC

机构：

[1] France Telecom, CNET, LAB, 22301 Lannion, BP 40, Route de Trégastel

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 21卷 / 2-3期

关键词：

D O I：

10.1016/0921-5107(93)90345-N

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In the first part of this paper we discuss the optimization of the growth conditions of molecular beam epitaxy GaSb layers. Then we present preliminary results for GaSb-AlSb multiple quantum wells which have one excitonic absorption line peaking at about 1.5 mu m at room temperature. Finally we present a 10 pair Bragg reflector which shows 97% reflectivity. These preliminary results allow the GaSb-AlSb system to be considered for optoelectronic devices.

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页码：185 / 188

页数：4

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