BINDING-ENERGIES OF D- ION IN GAAS QUANTUM-WELL

被引：1

作者：

CHANG, YH

YEH, JJ

SHEU, YM

WANG, CC

CHEN, TC

CHANG, KH

LEE, CP

机构：

[1] AT&T BELL LABS, MURRAY HILL, NJ 07974 USA

[2] NATL CHIAO TUNG UNIV, INST ELECTR, HSINCHU, TAIWAN

来源：

SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 4-6期

关键词：

D O I：

10.1016/0038-1101(94)90273-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Magnetic field dependent binding energies of the D- ion in the center of a 210 angstrom GaAs quantum well are determined by temperature magneto-transport measurments. The binding energies increase from 2.1 meV at 2T to 4 meV at 8T, and are consistently higher than the transition energies ootained from magneto-optical measurements performed on the same sample. We conclude from these data that in the magneto-optical measurement the observed transitions are between ground and excited D- states.

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页码：673 / 675

页数：3

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