INVESTIGATION OF VOLTAGE BREAKDOWN IN SEMI-INSULATING GAAS

被引：16

作者：

HAISTY, RW

HOYT, PL

机构：

来源：

SOLID-STATE ELECTRONICS | 1967年 / 10卷 / 08期

关键词：

D O I：

10.1016/0038-1101(67)90162-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：795 / &

共 14 条

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