MEASUREMENT OF THE ROOM-TEMPERATURE BAND-GAPS OF RED HGI2 BY A PHOTOCONDUCTIVE TECHNIQUE

被引：5

作者：

LOPEZCRUZ, E

RAMOS, O

机构：

[1] Univ Autonoma de Puebla, Puebla, Mex, Univ Autonoma de Puebla, Puebla, Mex

来源：

SOLID STATE COMMUNICATIONS | 1988年 / 65卷 / 02期

关键词：

PHOTOCONDUCTIVITY;

D O I：

10.1016/0038-1098(88)90680-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The direct and indirect band gaps of red HgI//2 were measured at room temperature by means of the Moss-Hawkins photoconductive technique. The analysis of the results by the theory of indirect transitions yields E//g//i equals 2. 030 ev and E//p//h equals 0. 013 ev for the indirect band gap and the phonon energy, respectively. The value of the direct band gap obtained is E//g//d equals 2. 108 ev.

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页码：167 / 169

页数：3

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