L2,3 EDGE OF SILICON - THEORY AND EXPERIMENT

被引:11
作者
AEBI, P
KELLER, J
ERBUDAK, M
VANINI, F
机构
来源
PHYSICAL REVIEW B | 1988年 / 38卷 / 08期
关键词
D O I
10.1103/PhysRevB.38.5392
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:5392 / 5396
页数:5
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