SPACE-CHARGE-LIMITED-CURRENTS IN IODINE DOPED GASE SINGLE-CRYSTALS

被引：11

作者：

DEBLASI, C ^{[1
]}

GALASSINI, S ^{[1
]}

MANFREDOTTI, C ^{[1
]}

MICOCCI, G ^{[1
]}

TEPORE, A ^{[1
]}

RIZZO, A ^{[1
]}

机构：

[1] UNIV BARI,IST FIS,I-70124 BARI,ITALY

来源：

MATERIALS CHEMISTRY | 1979年 / 4卷 / 03期

关键词：

D O I：

10.1016/0390-6035(79)90032-4

中图分类号：

O69 [应用化学];

学科分类号：

081704 ;

摘要：

Validity tests of Space-Charge-Limited-Currents (SCLC) method of trapping center analysis have been carried out on GaSe single crystals doped with iodine. To this purpose two single crystal ingots of GaSe doped with different iodine concentrations during the growth have been obtained from the melt by Bridgman-Stockbarger method. The perfect similarity of the results obtained with opposite direction of the electric field, in different samples of the same ingot and at various times, proves the reliability of the SCLC method. Finally the sensitivity of the method has been cheked by analysing GaSe samples with different iodine concentration. © 1979.

引用

页码：437 / 444

页数：8

共 9 条

[1] MELT GROWTH OF SINGLE-CRYSTAL INGOTS OF GASE BY BRIDGMAN-STOCKBARGERS METHOD [J].