LIQUID-PHASE EPITAXIAL (LPE) GROWN JUNCTION IN1-XGAXP (X - 0.63) LASER OF WAVELENGTH LAMBDAL - 5900 A (2.10 EV, 77 DEGREES K)

被引:23
作者
HITCHENS, WR
HOLONYAK, N
LEE, MH
CAMPBELL, JC
COLEMAN, JJ
GROVES, WO
KEUNE, DL
机构
[1] UNIV ILLINOIS,DEPT ELECT ENGN & MAT RES LAB,URBANA,IL 61801
[2] MONSANTO CO,ST LOUIS,MO 63166
关键词
D O I
10.1063/1.1655505
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:352 / 354
页数:3
相关论文
共 19 条
  • [1] Alferov Zh. I., 1968, Fizika i Tekhnika Poluprovodnikov, V2, P1545
  • [2] ALFEROV ZI, 1969, SOV PHYS SEMICOND+, V2, P1289
  • [3] ALFEROV ZI, PRIVATE COMMUNICATIO
  • [4] ALTARELLI M, UNPUBLISHED
  • [5] GAAS JUNCTION LASERS CONTAINING AMPHOTERIC DOPANTS GE AND SI
    BURNHAM, RD
    DAPKUS, PD
    HOLONYAK, N
    KEUNE, DL
    ZWICKER, HR
    [J]. SOLID-STATE ELECTRONICS, 1970, 13 (02) : 199 - &
  • [6] SPECTRAL BEHAVIOR, CARRIER LIFETIME, AND PULSED AND CW LASER OPERATION (77 DEGREES K) OF IN1-XGAXP
    BURNHAM, RD
    HOLONYAK, N
    KEUNE, DL
    SCIFRES, DR
    [J]. APPLIED PHYSICS LETTERS, 1971, 18 (04) : 160 - &
  • [7] LUMINESCENCE, LASER, AND CARRIER-LIFETIME BEHAVIOR OF CONSTANT-TEMPERATURE LPE IN1-XGAXP (CHI=0.52) GROWN ON (100)GAAS
    CAMPBELL, JC
    HITCHENS, WR
    HOLONYAK, N
    LEE, MH
    LUDOWISE, MJ
    COLEMAN, JJ
    [J]. APPLIED PHYSICS LETTERS, 1974, 24 (07) : 327 - 330
  • [8] EFFECT OF TE AND S DONOR LEVELS ON PROPERTIES OF GAAS1-XPX NEAR DIRECT-INDIRECT TRANSITION
    CRAFORD, MG
    STILLMAN, GE
    ROSSI, JA
    HOLONYAK, N
    [J]. PHYSICAL REVIEW, 1968, 168 (03): : 867 - &
  • [9] HAYASHI I, 1969, IEEE J QUANTUM ELECT, VQE 5, P211
  • [10] HITCHENS WR, TO BE PUBLISHED