SECONDARY RECRYSTALLIZATION OF SILICON-IRON BY SOLUTE-INDUCED BOUNDARY RESTRAINT

被引：7

作者：

GRENOBLE, HE

FIELDLER, HC

机构：

[1] General Electric Company, Power Distribution Division, Schenectady

[2] General Electric Company, Research and Development Center, Schenectady

来源：

JOURNAL OF APPLIED PHYSICS | 1969年 / 40卷 / 03期

关键词：

D O I：

10.1063/1.1657777

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The secondary recrystallization of silicon-iron requires that normal grain growth be restrained. This restraint has been attributed to dispersions of small inclusions usually identified as sulfides or nitrides. In this paper, it is shown that sulfur and nitrogen, when present together as solutes, will enable secondary recrystallization to occur. © 1969 The American Institute of Physics.

引用

页码：1575 / &