ENHANCEMENT OF DONOR ELECTRONIC RAMAN-SCATTERING IN CDS

被引:28
作者
YU, PY
机构
[1] IBM Thomas J. Watson Research Center, Yorktown Heights
来源
PHYSICAL REVIEW B | 1979年 / 20卷 / 12期
关键词
D O I
10.1103/PhysRevB.20.5286
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Resonance enhancements of electronic Raman scattering due to shallow donors (substitutional Cl and F) in CdS are reported. The experimental results are interpreted quantitatively in terms of two-step" electronic Raman processes. The resonant intermediate states are the top valence bands and bottom conduction band of CdS and also excitons bound to the donors. The relative contributions of the valence bands to the scattering cross section have been calculated with Hopfield's quasicubic model. It is demonstrated that by utilizing resonance enhancements donor electronic Raman scattering can be observed with only a few milliwatts of laser power in CdS containing less than 1016 cm-3 of donor atoms. © 1979 The American Physical Society."
引用
收藏
页码:5286 / 5291
页数:6
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