DIFFUSION OF ARSENIC NEAR INTERFACE OF GAAS-GE EPITAXY

被引:15
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ISAWA, N
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10.1143/JJAP.7.81
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O59 [应用物理学];
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页码:81 / &
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CUTTRISS, DB .
BELL SYSTEM TECHNICAL JOURNAL, 1961, 40 (02) :509-+
[2]   SOME CHARACTERISTICS OF GAAS-GE EPITAXY [J].
SCHULZE, RG .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (11) :4295-&