AVALANCHE INITIATION PROBABILITY OF AVALANCHE-DIODES ABOVE BREAKDOWN VOLTAGE

被引：147

作者：

MCINTYRE, RJ ^{[1
]}

机构：

[1] RCA LTD,ST ANNE BELLEVUE,QUEBEC,CANADA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1973年 / ED20卷 / 07期

关键词：

D O I：

10.1109/T-ED.1973.17715

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：637 / 641

页数：5

共 19 条

[1] THRESHOLD ENERGIES FOR ELECTRON-HOLE PAIR PRODUCTION BY IMPACT IONIZATION IN SEMICONDUCTORS [J].

ANDERSON, CL ;

CROWELL, CR .

PHYSICAL REVIEW B, 1972, 5 (06) :2267-&

[2] NOISE AND MULTIPLICATION MEASUREMENTS IN INSB AVALANCHE PHOTODIODES [J].

BAERTSCH, RD .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (11) :4267-+

[3] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J].

BARAFF, GA .

PHYSICAL REVIEW, 1962, 128 (06) :2507-&

[4] TEMPERATURE DEPENDENCE OF IONIZATION RATES IN GAAS [J].

CHANG, YJ ;

SZE, SM .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (13) :5392-&

[5]

CONRADI J, 1972, IEEE T ELECTRON DEVI, VED19, P713

[6] TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS [J].

CROWELL, CR ;

SZE, SM .

APPLIED PHYSICS LETTERS, 1966, 9 (06) :242-&

[7]

DECKER DR, 1970, IEEE T ELECTRON DEVI, VED17, P290

[8] IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J].

LEE, CA ;

KLEIMACK, JJ ;

BATDORF, RL ;

WIEGMANN, W ;

LOGAN, RA .

PHYSICAL REVIEW, 1964, 134 (3A) :A761-+

[9] CHARGE MULTIPLICATION IN GAP P-N JUNCTIONS [J].

LOGAN, RA ;

WHITE, HG .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3945-&

[10]

LOGAN RA, 1966, J PHYS SOC JPN, VS 21, P434

← 1 2 →