NEW QUANTUM AND ELECTRONIC THEORY OF METAL-SEMICONDUCTOR CONTACTS

被引：38

作者：

PELLEGRINI, B ^{[1
]}

机构：

[1] UNIV PISA, CONSIGLIO NAZL RICERCHE, CENTRO STUDIO METODI DISPOSITIVI RADIOTRASMISSIONE, 56100 PISA, ITALY

来源：

PHYSICAL REVIEW B | 1973年 / 7卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.7.5299

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5299 / 5312

页数：14

共 53 条

[1]

[Anonymous], 1939, WISS VEROFF SIEMENS

[2] ELECTRICAL TRANSPORT AND CONTACT PROPERTIES OF LOW RESISTIVITY N-TYPE ZINC SULFIDE CRYSTALS (HALL EFFECT - BARRIER HEIGHT - WORK FUNCTION - N-TYPE CONDUCTIVITY - E) [J].

AVEN, M ;

MEAD, CA .

APPLIED PHYSICS LETTERS, 1965, 7 (01) :8-&

[3] Theory of the work function II. The surface double layer [J].

Bardeen, J .

PHYSICAL REVIEW, 1936, 49 (09) :0653-0663

[4] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].

BARDEEN, J .

PHYSICAL REVIEW, 1947, 71 (10) :717-727

[5]

BONCHBRUYEVICH VL, 1966, ELECTRONIC THEORY HE

[6] DOPING DEPENDENCE OF BARRIER HEIGHT OF PALLADIUM-SILICIDE SCHOTTKY-DIODES [J].

BROOM, RF .

SOLID-STATE ELECTRONICS, 1971, 14 (11) :1087-+

[7] GALLIUM PHOSPHIDE-GOLD SURFACE BARRIER [J].

COWLEY, M ;

HEFFNER, H .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (01) :255-&

[8]

CROWELL CR, 1965, T METALL SOC AIME, V233, P478

[9] SURFACE STATE AND INTERFACE EFFECTS ON CAPACITANCE-VOLTAGE RELATIONSHIP IN SCHOTTKY BARRIERS [J].

CROWELL, CR ;

ROBERTS, GI .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) :3726-&

[10] ATTENUATION LENGTH MEASUREMENTS OF HOT ELECTRONS IN METAL FILMS [J].

CROWELL, CR ;

HOWARTH, LE ;

SPITZER, WG ;

LABATE, EE .

PHYSICAL REVIEW, 1962, 127 (06) :2006-&

← 1 2 3 4 5 6 →