FAR-INFRARED LASER SPECTROSCOPY OF V3SI

被引：27

作者：

MCKNIGHT, SW ^{[1
]}

BEAN, BL ^{[1
]}

PERKOWITZ, S ^{[1
]}

机构：

[1] EMORY UNIV,DEPT PHYS,ATLANTA,GA 30322

来源：

PHYSICAL REVIEW B | 1979年 / 19卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.19.1437

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have measured the ratio of the superconducting to the normal-state transmissions, TsTn, in two thin films of V3Si with a new optically pumped far-infrared laser spectrometer. The laser system gave exceptional signal-to-noise ratios with room-temperature detectors. The data could not be well fitted with the usual Mattis-Bardeen result but could be explained by the Leplae formulation which includes the effects of a finite scattering time. Our analysis gave a value 2ΔkTc=3.76±0.1 for the better of the two films (Tc=15.7 K) in good agreement with tunneling determinations and with fewer possibilities for surface problems. We observed features below the gap energy in both samples whose origin is not understood. © 1979 The American Physical Society.

引用

页码：1437 / 1442

页数：6

共 20 条

[1] FREQUENCY-DEPENDENT AND TEMPERATURE-DEPENDENT ELECTRON-PHONON RENORMALIZATION EFFECTS - COMMENT [J].