MICROWAVE THERMAL MODULATION OF PHOTOLUMINESCENCE IN III-V SEMICONDUCTORS

被引：18

作者：

DELONG, MC ^{[1
]}

VIOHL, I ^{[1
]}

OHLSEN, WD ^{[1
]}

TAYLOR, PC ^{[1
]}

OLSON, JM ^{[1
]}

机构：

[1] SOLAR ENERGY RES INST,GOLDEN,CO 80401

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.43.1510

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of an applied microwave field on low-temperature photoluminescence (PL) have been investigated in epitaxial Ga0.52In0.48P and GaAs. The modulation-frequency dependence of the microwave-modulated PL was compared with the frequency response in nominally identical samples directly heated by an alternating current passing through the sample substrate. We give strong evidence that (1) the mechanism, whereby the microwaves interact with the PL in Ga0.48In0.52P, is via simple heating of the lattice and (2) in superfluid helium the time constant for thermal equilibration of the epilayer to its environment is less than 2-mu-sec, in agreement with theoretical estimates. This thermal-coupling mechanism has been observed in Ga0.52In0.48P, GaAs(x)P1-x, and GaAs1-xSb(x), all of which exhibit a propensity to form ordered structures. The coupling in GaAs, InP, CdS, InP/Ga0.47In0.53As/InP, and GaAs/Al(x)Ga1(-x)As/GaAs is not thermal but may involve impact ionization.

引用

页码：1510 / 1519

页数：10

共 37 条

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].