SELF-ALIGNED PHASE-SHIFTING MASK FOR CONTACT HOLE FABRICATION

被引：4

作者：

TODOKORO, Y

WATANABE, H

HIRAI, Y

NOMURA, N

INOUE, M

机构：

[1] Kyoto Research Laboratory Matsushita Electronics Corporation, Kyoto

[2] Semiconductor Research Center, Matsushita Electric Industrial Co. Ltd., Osaka

来源：

MICROELECTRONIC ENGINEERING | 1991年 / 13卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(91)90063-J

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new fabrication process and pattern transfer characteristics of a self-aligned phase shifting mask have been described. The use of the self-aligned phase shifting mask improves the resolution and the depth of focus for contact hole patterns. However, it does not improve the resolution for line and space patterns.

引用

页码：131 / 134

页数：4

共 6 条

[1]

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[2]

Levenson, Viswanasan, Simpson, Improving resolution in photolithography with a phase-shifting mask, IEEE Transactions on Electron Devices, 29 ED, (1982)

[3]

Terasawa, Hasegawa, Kurosaki, Tanaka, <title>0.3-micron Optical Lithography Using A Phase-Shifting Mask</title>, Proc. of SPIE, 1088, pp. 25-33, (1989)

[4]

Nitayama, Sato, Hashimoto, Shigematsu, Nakase, Technical Digest, IEDM, pp. 57-60, (1989)

[5]

Watanabe, Todokoro, Inoue, Proc. of Spring Meeting, Japan Soc. of Appl. Phys., (1990)

[6]

Jinbo, Yamashita, Sadamura, 34th Int. Symp. on Electron, Ion and Photon Beams, (1990)

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