ANOMALOUS ELECTRICAL PROPERTIES OF SOLUTION-GROWN P-TYPE GAP

被引：13

作者：

FOSTER, LM

WOODS, JF

LEWIS, JE

机构：

[1] IBM Research Division

来源：

APPLIED PHYSICS LETTERS | 1969年 / 14卷 / 01期

关键词：

D O I：

10.1063/1.1652643

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The hole concentration determined from Hall effect measurements on Zn-doped, solution-grown GaP was found to exceed the Zn concentration. It has not been established whether the effect is due to additional acceptor defects introduced simultaneously with the Zn, or to an anomalously small Hall mobility/drift mobility ratio. © 1969 The American Institute of Physics.

引用

页码：25 / &

共 13 条

[1] GALVANOMAGNETIC STUDIES OF DEGENERATE GALLIUM-DOPED GERMANIUM - NONPARABOLIC ENERGY BANDS WITH VARIABLE WARPING
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STRAUB, WD
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[2] Blakemore J. S., 1962, SEMICONDUCTOR STATIS
[3] CASEY HC, 1968, B AM PHYS SOC, V13, P376
[4] DEAN PJ, PRIVATE COMMUNICATIO
[5] FOSTER LM, TO BE PUBLISHED
[6] DEFECTS IN GAAS PRODUCED BY LITHIUM
FULLER, CS
WOLFSTIRN, KB
[J]. APPLIED PHYSICS LETTERS, 1963, 2 (03) : 45 - 47
[7] NEW RED PAIR LUMINESCENCE FROM GAP
HENRY, CH
DEAN, PJ
CUTHBERT, JD
[J]. PHYSICAL REVIEW, 1968, 166 (03): : 754 - &
[8] KROGER FA, 1964, CHEM IMPERFECT CRYST, pCH13
[9] MEHTA R, 51031 STANF U SOL ST
[10] OPTICAL PROPERTIES OF CD-O AND ZN-O COMPLEXES IN GAP
MORGAN, TN
WELBER, B
BHARGAVA, RN
[J]. PHYSICAL REVIEW, 1968, 166 (03): : 751 - &

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