PULSED ELECTRON-BEAMS FOR ANNEALING OF ION-IMPLANTED SILICON

被引：4

作者：

LITTLE, RG

GREENWALD, AC

MINNUCCI, JA

机构：

[1] Spire Corpration, Bedford

来源：

关键词：

D O I：

10.1109/TNS.1979.4330462

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：1683 / 1685

页数：3

共 8 条

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BRICE, JC .

[2]

GREENWALD AG, UNPUBLISHED

[3]

KAMINS TI, 1978, COMMUNICATION

[4] SILICON SOLAR-CELLS BY HIGH-SPEED LOW-TEMPERATURE PROCESSING [J].

KIRKPATRICK, AR ;

MINNUCCI, JA ;

GREENWALD, AC .

[5]

KIRKPATRICK AR, 1978, 13TH IEEE PHOT SPEC

[6]

LAU SS, 1978, APPL PHYS LETT, V33, P236

PARKER, RK ;

ANDERSON, RE ;

DUNCAN, CV .

[8]

SEIDEL TE, 1969, T METALL SOC AIME, V245, P491