STRAINED-LAYER SEMICONDUCTOR SUPERLATTICES

[1] ELECTRONIC-STRUCTURE AND SEMICONDUCTOR-SEMIMETAL TRANSITION IN INAS-GASB SUPER-LATTICES [J]. PHYSICAL REVIEW B, 1983, 28 (02) : 842 - 845

[2] CALCULATIONS OF HOLE SUBBANDS IN SEMICONDUCTOR QUANTUM WELLS AND SUPERLATTICES [J]. PHYSICAL REVIEW B, 1985, 32 (08) : 5138 - 5143

[3] ELECTRONIC-STRUCTURE OF TWO-DIMENSIONAL SEMICONDUCTOR SYSTEMS [J]. JOURNAL OF LUMINESCENCE, 1985, 30 (1-4) : 472 - 487

[4] PHOTOLUMINESCENCE AND PHOTOCONDUCTIVITY MEASUREMENTS ON BAND-EDGE OFFSETS IN STRAINED MOLECULAR-BEAM-EPITAXY-GROWN INX GA1-XAS/GAAS QUANTUM WELLS [J]. PHYSICAL REVIEW B, 1988, 37 (08): : 4032 - 4038

[5] VARIATION OF THE CRITICAL LAYER THICKNESS WITH IN CONTENT IN STRAINED INX GA1-XAS-GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1987, 51 (10) : 752 - 754

[6] [Anonymous], 1982, THEORY DISLOCATIONS

[7] OPTICAL-ABSORPTION AND X-RAY-DIFFRACTION IN NARROW-BAND-GAP INAS/GASB SUPERLATTICES [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (10) : 3933 - 3935

[8] SELF-CONSISTENT CALCULATION OF ELECTRONIC-STRUCTURE AT AN ABRUPT GAAS-GE INTERFACE [J]. PHYSICAL REVIEW LETTERS, 1977, 38 (05) : 237 - 240

[9] SUPER-LATTICE BAND-STRUCTURE IN THE ENVELOPE-FUNCTION APPROXIMATION [J]. PHYSICAL REVIEW B, 1981, 24 (10): : 5693 - 5697

[10] THEORETICAL INVESTIGATIONS OF SUPER-LATTICE BAND-STRUCTURE IN THE ENVELOPE-FUNCTION APPROXIMATION [J]. PHYSICAL REVIEW B, 1982, 25 (12) : 7584 - 7597

[1] ELECTRONIC-STRUCTURE AND SEMICONDUCTOR-SEMIMETAL TRANSITION IN INAS-GASB SUPER-LATTICES [J]. PHYSICAL REVIEW B, 1983, 28 (02) : 842 - 845

[2] CALCULATIONS OF HOLE SUBBANDS IN SEMICONDUCTOR QUANTUM WELLS AND SUPERLATTICES [J]. PHYSICAL REVIEW B, 1985, 32 (08) : 5138 - 5143

[3] ELECTRONIC-STRUCTURE OF TWO-DIMENSIONAL SEMICONDUCTOR SYSTEMS [J]. JOURNAL OF LUMINESCENCE, 1985, 30 (1-4) : 472 - 487

[4] PHOTOLUMINESCENCE AND PHOTOCONDUCTIVITY MEASUREMENTS ON BAND-EDGE OFFSETS IN STRAINED MOLECULAR-BEAM-EPITAXY-GROWN INX GA1-XAS/GAAS QUANTUM WELLS [J]. PHYSICAL REVIEW B, 1988, 37 (08): : 4032 - 4038

[5] VARIATION OF THE CRITICAL LAYER THICKNESS WITH IN CONTENT IN STRAINED INX GA1-XAS-GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1987, 51 (10) : 752 - 754

[6] [Anonymous], 1982, THEORY DISLOCATIONS

[7] OPTICAL-ABSORPTION AND X-RAY-DIFFRACTION IN NARROW-BAND-GAP INAS/GASB SUPERLATTICES [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (10) : 3933 - 3935

[8] SELF-CONSISTENT CALCULATION OF ELECTRONIC-STRUCTURE AT AN ABRUPT GAAS-GE INTERFACE [J]. PHYSICAL REVIEW LETTERS, 1977, 38 (05) : 237 - 240

[9] SUPER-LATTICE BAND-STRUCTURE IN THE ENVELOPE-FUNCTION APPROXIMATION [J]. PHYSICAL REVIEW B, 1981, 24 (10): : 5693 - 5697

[10] THEORETICAL INVESTIGATIONS OF SUPER-LATTICE BAND-STRUCTURE IN THE ENVELOPE-FUNCTION APPROXIMATION [J]. PHYSICAL REVIEW B, 1982, 25 (12) : 7584 - 7597