STUDY OF EPITAXIAL-GROWTH OF DIAMOND-LIKE SEMICONDUCTOR-FILMS BY COMPUTER-SIMULATION

被引：9

作者：

ALEKSANDROV, LN ^{[1
]}

KOGAN, AN ^{[1
]}

DYAKONOVA, VI ^{[1
]}

TROSTINA, NP ^{[1
]}

机构：

[1] MORDOVIAN STATE UNIV,SARANSK,USSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1980年 / 58卷 / 01期

关键词：

D O I：

10.1002/pssa.2210580131

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：237 / 243

页数：7

共 14 条

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[3] ALEKSANDROV LN, 1978, IZV AKAD NAUK SSS IM, V14, P981
[4] SIMULATION OF CRYSTAL-GROWTH WITH SURFACE DIFFUSION
GILMER, GH
BENNEMA, P
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) : 1347 - +
[5] COMPUTER-SIMULATION OF CRYSTAL-GROWTH
GILMER, GH
[J]. JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) : 3 - 10
[6] JOHN ER, 1976, CONSCIOUSNESS SELF R, V1, P1
[7] KASHCHIEV D, 1977, J CRYST GROWTH, V47, P125
[8] KHARCHENKO VV, 1976, PROBLEMS EPITAXIAL P
[9] KOLODKIN VM, 1977, DOKL AKAD NAUK SSSR+, V237, P379
[10] LANDAU LD, 1964, STATISTICAL PHYSICS