AN INFRARED SENSITIVE GE-TE HETEROJUNCTION

被引：3

作者：

ANNER, GE

机构：

[1] Dept. of Elec. Engrg., Queen's University, Kingston, Ont.

来源：

PROCEEDINGS OF THE IEEE | 1969年 / 57卷 / 12期

关键词：

D O I：

10.1109/PROC.1969.7501

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new Ge-Te heterojunction device is described. Its small-signal-level resistance under IR excitation can be smaller than its dark resistance by a factor of at least 1000 at 77 K. Copyright © 1969 by The Instrtute of Electrical and Electronics Engineers, Inc.

引用

页码：2150 / &