OBSERVATION OF QUANTUM GALVANOMAGNETIC PHENOMENA IN N-TYPE INDIUM ANTIMONIDE

被引：5

作者：

HUFF, HR

KAWAJI, S

GATOS, HC

机构：

[1] Department of Metallurgy and Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts

[2] Texas Instruments Inc., Dallas, Texas

[3] Department of Physics, Gakushuin University, Tokyo, Mejiro

来源：

PHYSICA STATUS SOLIDI | 1968年 / 30卷 / 02期

关键词：

D O I：

10.1002/pssb.19680300222

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Quantization effects in the bulk galvanomagnetic properties of n‐type InSb were studied in conjucntion with the transport properties of compound semiconductor surfaces. The transverse and longitudinal magneto‐resistivity were measured at 4.2, 50, and 77°K. The former was found to increase with increasing magnetic field at all temperatures and (for a given temperature) was an order of magnitude larger than the latter which became saturated at the two higher temperatures. At 4.2°K, the electrons were weakly degenerate and the bulk mobility was determined by ionized impurity scattering. At 77°K, the electrons were non‐degenerate and the predominant scattering mechanism was probably high‐temperature optical phonon scattering. Copyright © 1968 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：613 / &

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