EXCESS NOISE IN NARROW GERMANIUM P-N JUNCTIONS

[1] TEMPERATURE DEPENDENCE OF FLICKER NOISE OF P-N-P JUNCTION TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (10) : 1249 - 1249

[2] INTERNAL FIELD EMISSION IN SILICON P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1957, 106 (03): : 418 - 426

[3] ENGLUND JW, TRANSISTORS, V1, P309

[4] NEW PHENOMENON IN NARROW GERMANIUM PARA-NORMAL-JUNCTIONS [J]. PHYSICAL REVIEW, 1958, 109 (02): : 603 - 604

[5] ESAKI L, 1958, JUN INT C SOL STAT P

[6] FONGER WH, TRANSISTORS, V1, P239

[7] MEASUREMENT OF NOISE SPECTRA OF A GERMANIUM P-N JUNCTION DIODE [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (02): : 231 - 241

[8] KOMATSUBARA K, 1957, J APPL PHYS JAPAN, V26, P72

[9] MCWHORTER AL, 1956, SEMICONDUCTOR SURFAC, P207

[10] ELECTRICAL NOISE IN SEMICONDUCTORS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1952, 31 (05): : 950 - 975

[1] TEMPERATURE DEPENDENCE OF FLICKER NOISE OF P-N-P JUNCTION TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (10) : 1249 - 1249

[2] INTERNAL FIELD EMISSION IN SILICON P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1957, 106 (03): : 418 - 426

[3] ENGLUND JW, TRANSISTORS, V1, P309

[4] NEW PHENOMENON IN NARROW GERMANIUM PARA-NORMAL-JUNCTIONS [J]. PHYSICAL REVIEW, 1958, 109 (02): : 603 - 604

[5] ESAKI L, 1958, JUN INT C SOL STAT P

[6] FONGER WH, TRANSISTORS, V1, P239

[7] MEASUREMENT OF NOISE SPECTRA OF A GERMANIUM P-N JUNCTION DIODE [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (02): : 231 - 241

[8] KOMATSUBARA K, 1957, J APPL PHYS JAPAN, V26, P72

[9] MCWHORTER AL, 1956, SEMICONDUCTOR SURFAC, P207

[10] ELECTRICAL NOISE IN SEMICONDUCTORS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1952, 31 (05): : 950 - 975