VDMOS POWER TRANSISTOR DRAIN-SOURCE RESISTANCE RADIATION DEPENDENCE

被引：14

作者：

BLACKBURN, DL

ROBBINS, TC

GALLOWAY, KF

机构：

[1] DEPT DEF,FT GEORGE G MAEDE,MD 20755

[2] UNIV MARYLAND,DEPT ELECT ENGN,COLLEGE PK,MD 20742

来源：

关键词：

D O I：

10.1109/TNS.1981.4335729

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4354 / 4359

页数：6

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[4]

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HUMPHREYS, JC ;

MCLAUGHLIN, WL .

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[7]

SEVERNS R, 1980, ELECTRONICS, V53, P143

SUN, SC ;

PLUMMER, JD .

[9]

ANN BOOK ASTM STA 43