MAGNETORESISTANCE AND MAGNETIC-PROPERTIES OF NIFE/OXIDE/CO JUNCTIONS PREPARED BY MAGNETRON SPUTTERING

被引：54

作者：

PLASKETT, TS ^{[1
]}

FREITAS, PP ^{[1
]}

BARRADAS, NP ^{[1
]}

DASILVA, MF ^{[1
]}

SOARES, JC ^{[1
]}

机构：

[1] INETI,P-2685 SACAVEM,PORTUGAL

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 10期

关键词：

D O I：

10.1063/1.358319

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

NiFe/oxide/Co junctions were fabricated by magnetron sputtering for studies of polarized electron transport across the insulating barrier. Al 2O3, Al-Al2O3, and MgO insulating barriers were prepared with junction resistances from 0.5 to 116 Ω. The I-V characteristics at room temperature are linear. For low barrier resistance, the magnetoresistance of the structure is dominated by the anisotropic magnetoresistance of the ferromagnetic electrodes. For the higher barrier resistances, a different magnetoresistance effect is observed, which is tentatively related to tunneling or spin-valve effects across the insulating junction.

引用

页码：6104 / 6106

页数：3

共 5 条

[1] TUNNELING BETWEEN FERROMAGNETIC-FILMS [J].