WARM ELECTRON EFFECTS IN NARROW GAP HG1-XCDXTE ALLOYS AT AMBIENT-TEMPERATURES

被引：8

作者：

ELLIOTT, CT

SPAIN, IL

机构：

[1] ROY RADAR ESTAB,GREAT MALVERN,ENGLAND

[2] UNIV MARYLAND,DEPT CHEM ENGN,LAB HIGH PRESSURE SCI,COLLEGE PK,MD 20742

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1974年 / 7卷 / 04期

关键词：

D O I：

10.1088/0022-3719/7/4/010

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：727 / 735

页数：9

共 21 条

[1] AUGER EFFECT IN SEMICONDUCTORS [J].

BEATTIE, AR ;

LANDSBERG, PT .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256) :16-29

[2] ELECTRICAL TRANSPORT PROPERTIES OF SEMICONDUCTING CDXHG1-XTE ALLOYS [J].

ELLIOTT, CT ;

SPAIN, IL .

SOLID STATE COMMUNICATIONS, 1970, 8 (24) :2063-&

[3] DIELECTRIC BREAKDOWN IN SOLIDS [J].

FROHLICH, H ;

PARANJAPE, BV .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (01) :21-32

[4] CONDUCTION BAND STRUCTURE OF CD.01HG0.9TE [J].

GALAZKA, RR ;

SOSNOWSK.L .

PHYSICA STATUS SOLIDI, 1967, 20 (01) :113-&

[5]

HARMAN TC, P INT C PM II VI SEM, P982

[6]

HARMAN TC, 1967, PHYSICS CHEMISTRY 2

[7]

KORENBLIT LL, 1968, FIZ TEKH POLUPROV, V2, P675

[8]

KORENBLIT LL, SOV PHYS SEMICOND, V2, P564

[9] THE THEORY OF THE MAGNETO-RESISTANCE EFFECTS IN POLAR SEMI-CONDUCTORS [J].

LEWIS, BF ;

SONDHEIMER, EH .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1955, 227 (1169) :241-251

[10] CALCULATION OF IONIZED-IMPURITY SCATTERING MOBILITY OF ELECTRONS IN HG1-XCDXTE [J].

LONG, D .

PHYSICAL REVIEW, 1968, 176 (03) :923-&

← 1 2 3 →