ELECTRICAL RESISTIVITY DUE TO VACANCIES AND IMPURITIES IN ALUMINUM - BAND STRUCTURE EFFECTS IN DEFECT SCATTERING IN POLYVALENT METALS

被引：18

作者：

FUKAI, Y

机构：

[1] Department of Mining, Metallurgy and Petroleum Engineering, University of Illinois, Urbana, IL

来源：

PHYSICS LETTERS A | 1968年 / A 27卷 / 07期

关键词：

D O I：

10.1016/0375-9601(68)90831-1

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The residual resistivity due to vacancies and impurity atoms in aluminum is calculated including the effect of Brillouin zone intersection with the Fermi surface. The result indicates the significance of this effect in the electron scattering by defects in polyvalent metals. © 1968.

引用

页码：416 / &

共 13 条

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